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The FX5596Y is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE (Bands 39 & 34 1880-1920MHz and 2010-2025MHz), with matched 50Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 14 high linearity TRx ports.

The FX5596Y consists of a GaAs HBT power amplifier, a SOI SP16T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The embedded SP16T switch enables up to 14 TRx ports with low insertion loss and high linearity, including 1 ultra-low insertion loss ports. The FX5596Y also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mm x 5.3mm x 0.69mm package, the FX5596Y greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD_LTE solution, facilitates the customer’s implementation, and saves board room and cost significantly.

The NZ5596G is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE (Bands 39 & 34 1880-1920MHz and 2010-2025MHz), with matched 50-Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 14 high linearity TRx ports.

The NZ5596G consists of a GaAs HBT power amplifier, a SOI SP16T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The embedded SP16T switch enables up to 14 TRx ports with low insertion loss and high linearity, including 1 ultra-low insertion loss ports. The NZ5596G also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.3mmx0.75mm package, the NZ5596G greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD_LTE solution, facilitates the customer's implementation, and saves board room and cost significantly.

The FX5596H is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE (Bands 39 & 34 1880-1920MHz and 2010-2025MHz), with matched 50-Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 14 high linearity TRx ports.

The FX5596H consists of a GaAs HBT power amplifier, a SOI SP16T antenna switch,and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The embedded SP16T switch enables up to 14 TRx ports with low insertion loss and high linearity, including 1 ultra-low insertion loss ports. The FX5596H also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.3mmx0.75mm package, the FX5596H greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD_LTE solution, facilitates the customer's implementation, and saves board room and cost significantly.

The FX5805A is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR (Bands 39 & 34), with matched 50-Ohm RF input and output ports.The FEM also supports UMTS/LTE applications through 16 high linearity TRx ports.

The FX5805A consists of a GaAs HBT power amplifier, a SOI SP8T, a SOI SP10T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into two independent switch blocks, comprising 7 LB ports and 9 MHB ports. Each switch block includes an integrated directional coupler that may be monitored on the CPL port with selectable forward or reverse directionality. Abuilt-in diplexer provides simultaneous LB and M/HB reception required for downlink CA at the single antenna port. The FX5805A also guarantees robust 8kV high ESD protection for the antenna port.

Housed in a compact 5.5mmx5.5mmx0.75mm package, the FX5805A greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD-LTE/5GNR solution, facilitates the customer's implementation, and saves board room and cost significantly.

The FX5820C is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports quad-band GSM/GPRS/EDGE(GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR(Bands 39 & 34) application. The FEM also supports UMTS/LTE applications through 15 high linearity TRx ports.

The FX5820C consists of a GaAs HBT power amplifier, a SOI SP7T, a SOI SP10T antenna switch, and a CMOS controller chip. With delicately designed internal low-pass filters,this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into dual independent switch blocks, comprising 6 LB ports and 9 M/HB ports. Each switch block includes an integrated directional coupler that may be monitored on the CPL port . The FX5820C also guarantees robust 8kV high ESD protection for the antenna port.

Housed in a compact 5.5mmx5.5mmx0.75mm package, the FX5820C greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD-LTE/5G-NR solution, facilitates the customer's implementation, and saves board room and cost significantly.

The FX5808A is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE(GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR (Bands 39 & 34), with matched 50-Ohm RF input and output ports. The FEM also supports UMTS/LTE applications through 16 high linearity TRx ports.

The FX5808A consists of a GaAs HBT power amplifier, a SOI SP4T, a SOI SP6T, a SOI SP8T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK and TD-SCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into three independent switch blocks, comprising 7 LB ports, 5 MB ports and 4 HB ports. Each switch block includes an integrated directional cou

pler that may be monitored on the CPL port with selectable forward or reverse directionality. A built-in diplexer and dual antenna configration provides simultaneous LB and M/HB reception required for downlink CA . The FX5808A also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.5mmx0.75mm package, the FX5808A greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD-LTE/5GNR solution, facilitates the customer’s implementation, and saves board room and cost significantly.

The FX5811 is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports both quad-band GSM/GPRS/EDGE(GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR (Bands 39 & 34 ), with matched 50-Ohm RF input and output ports.The FEM also supports UMTS/LTE applicationsthrough 16 high linearity TRx ports.

The FX5811 consists of a GaAs HBT power amplifier, a SOI SP4T, a SOI SP6T, a SOI SP8T antenna switch, and a CMOS controller chip. The GaAs HBT power amplifier can work in saturated mode for GMSK, as well as in linear mode for GMSK, EDGE 8PSK and TDSCDMA/TDD-LTE operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into three independent switch blocks, comprising 7 LB ports, 5 MB ports and 4 HB ports. Each switch block includes an integrated directional coupler that may be monitored on the CPL port. Three antenna configration provides simultaneous LB, MB and HB reception required for downlink CA . The FX5811 also guarantees robust 8kV high ESD protection for the antenna port.

Housed in a compact 5.5mmx5.5mmx0.75mm package, the FX5811 greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE/TD-SCDMA/TDD-LTE/5G NR solution, facilitates the customer's implementation, and saves board room and cost significantly.

FX5196 is a transmit and receive Front-End Module (FEM) with integrated power amplifier control designed in a low profile, compact form factor for quad-band cellular handsets comprising GSM850/GSM900 and DCS1800/PCS1900 operation. FX5196 supports quad-band GSM/GPRS/EDGE, with matched 50-Ohm RF input and output ports. The FEM also supports UMTS applications through 14 high linearity TRx ports.

The FX5196 consists of a CMOS power amplifier, a SOI SP16T antenna switch, and a CMOS controller chip. The CMOS power amplifier can work in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK operations. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The embedded SP16T switch enables up to 14 TRx ports with low insertion loss and high linearity, including 1 ultra-low insertion loss ports. The FX5196 also guarantees robust 8kV high ESD protection for the antenna port. The integrated multi-functional CMOS controller regulates the supply voltage to ramp the output RF power in saturated GSM/GPRS operation, flattens the power variation under battery voltage, ambient temperature, mismatch circumstances, optimize bias voltage for multi-mode operations, and powers up the SOI switch with internal voltage regulators.

Housed in a compact 5.5mmx5.3mmx0.74mm package, the FX5196 greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE solution, facilitates the customer's implementation, and saves board room and cost significantly

FX5124D is a transmit and receive Front-End Module (FEM) with integrated power amplifier control designed in a low profile, compact form factor for quad-band cellular handsets comprising GSM850/GSM900 and DCS1800/PCS1900 operation. FX5124D supports quad-band GSM/GPRS, with matched 50-Ohm RF input and output ports. The FEM also supports UMTS applications through four high linearity TRx ports.

The module consists of a GSM850/GSM900 PA block and a DCS1800/PCS1900 PA block, impedance-matching circuitry for 50 ohm input and output impedances, Tx harmonics filtering, high linearity / low insertion loss RF switch, and a Power Amplifier Control (PAC) block. One PA block supports the GSM850 / GSM900 bands and the other PA block supports the DCS1800/ PCS1900 bands. Both PA blocks share common power supply pads to distribute current. The output of each PA block and the outputs to the four receive pads are connected to the antenna pad through an RF switch. Four broadband interchangeable receive ports provide flexibility to support multimode and multiband configurations.FX5124D consists of a CMOS power amplifier, a SOI SP6T antenna switch on a multi-layer laminate substrate.

Band selection and control of transmit and receive are performed using four external control pads. Refer to the block diagram in Figure 1 below. The band select pad, BS1,BS2,Mode, and TxEN select GSM850, GSM900, DCS, and PCS modes of operation. Housed in a compact 6.0mmx6.0mmx0.74mm package, the FX5124D greatly lowers the front-end complexity of GSM/GPRS solution, facilitates the customer's implementation, and saves board room and cost significantly.

The FX5124D is compatible with logic levels from 1.2V to 2.9V for BS1, BS2, MODE and TxEN pads.

The FX5820G is a multi-mode multi-band front-end module (FEM) delivering both the power amplification and antenna switching functions. With the state-of-the-art integration design and advanced GaAs technology, this FEM supports quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) and dual-band TD-SCDMA/TDD-LTE/5G-NR (Bands 39 & 34) application. The FEM also supports UMTS/LTE applications through 15 high linearity TRx ports.

The FX5820G consists of a GaAs HBT power amplifier, a SOI SP7T, a SOI SP10T antenna switch, and a CMOS controller chip. With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The TRx ports are partitioned into dual independent switch blocks, comprising 6 LB ports and 9 M/HB ports. Each switch block includes an integrated directional coupler that maybe monitored on the CPL port . The FX5820G also guarantees robust 8kV high ESD protection for the antenna port.

Housed in a compact 5.5mmx5.5mmx0.7mm package, the FX5820G greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE solution, facilitates the customer's implementation, and saves board room and cost significantly.