Add.:16F, Block A, Shuimu Yifang Building, No. 286, Nanguang Road, Nanshan District, Shenzhen, China
Packaged in a compact 2mm x 2.5mm x 0.75mm module, the FX5328 performs with high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the feature of RoHS compliant, the FX5328 is free of hazardous substances and rated as green product.
The FX5328 is a 10-pin power amplifier module developed for LTE and NR applications. With advanced InGaP HBT technology, the module supports multiband bands applications. Included B5/n5(824-849MHz), B8/n8(880-915MHz), B20/n20(832-862MHz), B28/n28(703-748MHz) and B71/n71(663-698MHz). The FX5328 meets the stringent linearity requirements of Both LTE QPSK and NR DFTS-OFDM, CP-OFDM specifications, as well as those of 256QAM modulation.
The FX5328 is self contained with a GaAs power amplifier, a bias controller, input & output matching networks. The GaAs PA provides RF amplification in linear mode, while the integrated bias controller provides regulated voltage according to MIPI2.1 RFFE interface, which can be compatible with most of mobile handset or data device solutions. The module is fully matched to 50 ohms at all RF ports.
With Lansus's state-of-the-art technology and optimized bias table, the FX5328 reduces current consumption significantly in both high and low power operations. Compatible with ET(Envelope Tracking) and APT (Average Power Tracking) technology to extend battery life, the FX5328 efficiency can be further improved.
The FX5328 is rated to Moisture Sensitivity Level 3(MSL3) at 260°C per JEDEC J-STD-020.
• LTE Band 5/8/20/28/71
• NR n5/n8/n20/n28/n71
• Compatible with ET/APT
• Bandwidth 1.4MHz to 20MHz
• Up to 273 Resource Block
• Supply Voltage 3.0V-4.6V
• High efficiency
• Good Linearity
• MIPI2.1 RFFE interface
• Compact size 2mm x 2.5mm
• Low profile 0.75mm typically
• ESD Class 1C
• MSL rating level 3
• Green product
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