Add.:16F, Block A, Shuimu Yifang Building, No. 286, Nanguang Road, Nanshan District, Shenzhen, China
FX5566 power amplifier module (PAM) is designed for quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) application. The FX5566 consists of a GaAs HBT power amplifier and a CMOS controller chip. The CMOS controller provides PA bias and product identification read-back capability and is fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI).The PAM works in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK . With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The PAM also guarantees robust 8kV high ESD protection for the antenna port.
Housed in a compact 3.5mmx3.5mmx0.84mm package, the FX5566 greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE solution, facilitates the customer’s implementation, and saves board room and cost significantly.
• High efficiency
• Programmable bias for improved backed-off linearity
• High linearity
• MIPI 2.1
• Low standby leakage
• Compatible with DC-DC converter
• MSL rating level 3
• Green product
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