Packaged in a 3.0mm x 5.0mm x 0.745mm ( typ. ) module, the FX6877 performs with high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addtion to the feature of RoHS compliant, the FX6877 is free of hazardous substances and rated as green product.
FX6877 is a 30-pin Power Amplifier Module developed for LTE and 5G-NR standards. With advanced InGaP HBT and SOI technology, the module supports multi-bands LTE/ NR applications. The FX6877 meets stringent linearity requirements of DFT-S-OFDM and CP-OFDM specifications at APT(Average Power Tracking) Power Class 2(PC2) power targets.
The FX6877 is self contained with GaAs PA, CMOS controller, LTCC filter, SOI TRx switch, bi-directional coupler, low noise amplifier(LNA) and input/output matching network.
With Lansus's state-of-art technology and optimized bias table, the FX6877 reduces current consumption significantly in both high and low power operations. Compatible with APT technology to extend battery life, the FX6877 efficiency can be further improved.
• 5G-NR Power Class 2 High Power
• Supporting Bands 42, 43, 48, n77 and n78
• ET/APT application depends on internal bypass value
• Up to 100MHz bandwith and up to 273 Resource Block
• Integrated LNA with Multi-step Gain
• Integrated Bandpass Filter
• Integrated TRX Switch
• Integrated Bi-Directional Coupler
• High efficiency and Good linearity
• MIPI RFFE 2.1 interface
• Compact Size 3mm x 5mm
• Low Profile 0.745mm typ.
• ESD Class 1C
• MSL rating level 3
• Green product
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